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t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 1 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com p ad configuration p ad no. symbol 1 rf in 2 , 10 v g 1 - 2 4, 8 v g 3 3, 9 v d 1 - 2 5, 7 v d3 6 rf out applications ? x - band radar general description triquints TGA2623 is an x - band , high power mmic a mplifier fabricated on triquint s production 0.25um gan on sic process . the TGA2623 operates from 10 C 1 1 ghz and provides a superior combination of power, gain and efficiency. achieving 35 w of saturated output power with 27 .5 db of large signal gain and 47 % pow er - added efficiency, the TGA2623 provides the level of performance demand ed by todays system architectures. depending on the system requirements, the tga262 3 can support cost saving initiatives on existing syste ms while supporting next generation systems with increased performance. lead - free and rohs compliant. evaluation boa rds are available upon request. ordering information part eccn description tga2 62 3 3a001.b.2.b 10 C 11 ghz 35 w gan power amplifier product features ? frequency range: 10 C 11 ghz ? p sat : 4 5 .5 dbm @ p in = 18 dbm ? p1db: 4 1 dbm @ midband ? pae : > 4 7 % @ p in = 18 dbm ? large signal gain: 2 7.5 db ? small signal gain: 35 db ? bias : v d = 28 v , i dq = 290 ma , v g = - 2. 7 v typical ? pulsed v d : pw = 100u s and dc = 10% ? chip dimensions: 5.0 x 4 .8 6 x 0.10 mm functional block diagram 10 9 7 1 2 4 3 6 5 8
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 2 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0v gate voltage range (v g ) - 10 to - 2 v drain current (i d 1 - 2 ) 2 . 3 a drain current (i d 3 ) 4 . 3a gate current (i g 1 - 2 ) - 3.5 to 17.5 m a gate current (i g 3 ) - 11 to 28ma power dissipation (p diss ) , 85c , cw 96 w input power (p in ) , cw, 50, v d = 28v, 85c 24 dbm input power (p in ) , cw, vswr 6 :1, v d = 28 v, 85c 20 dbm channel t emperature (t ch ) 275c mounting temperature (30 s econds) 320c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 28 v drain current (i d q ) 29 0 m a (total) gate voltage (v g ) - 2.7 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 28 v, i d q = 29 0 m a, v g = - 2. 7 v typical , pulsed v d : pw = 100 u s, dc = 10% parameter min typical max units operational frequency range 10 1 1 ghz small signal gain 3 5 db input return loss > 1 5 db output return loss > 10 db power gain (pin = 18dbm) 27.5 db output power (pin = 18 dbm) 4 5 .5 db m power added efficiency (pin = 18 dbm) > 4 7 % power @ 1db compression (p1db) 41@ midband db small signal gain temperature coefficient - 0.0 7 5 db/ c recommended operating voltage: 2 0 28 32 v
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 3 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , pulsed v d : pw = 100 u s, dc = 10% 1.14 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 28 v , i d _drive = 3 a , p in =22dbm, p out = 45 .3 dbm , p diss = 51 w 143 c median lifetime (t m ) 3.8 5 x 10^10 hrs thermal resistance ( jc ) (1) t base = 85 c , cw 1.97 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 28 v , i d _drive = 2 . 94 a, p in = 22dbm, p out = 44 .9 dbm, p diss = 5 2w 1 87 c median lifetime (t m ) 4.12 x 10^ 7 hrs notes: 1. thermal resistance measured to back of c a rrier plate. mmic mounted on 40 mils cum 0 (80/2 0) carrier using 1.5 mil ausn. median lifetime test conditions: v d = 40 v; failure criteria = 10% reduction in i d _max 1 e+ 04 1e+05 1e+06 1 e+ 07 1 e+ 08 1e+09 1e+10 1 e+ 11 1e+12 1 e+ 13 1e+14 1 e+ 15 1e+16 1 e+ 17 1 e+ 18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 4 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance typical performance (small signal) 10 15 20 25 30 35 40 45 9 9.5 10 10.5 11 11.5 12 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 28 v, i dq = 290ma 10 15 20 25 30 35 40 45 9 9.5 10 10.5 11 11.5 12 s21 (db) frequency (ghz) gain vs. frequency vs. v d 20v 25v 28v 30v 32v temp. = +25 c i dq = 290ma 10 15 20 25 30 35 40 45 9 9.5 10 10.5 11 11.5 12 s21 (db) frequency (ghz) gain vs. frequency vs. i d 290ma 725ma temp. = +25 c v d = 28v -30 -25 -20 -15 -10 -5 0 9 9.5 10 10.5 11 11.5 12 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 290ma -30 -25 -20 -15 -10 -5 0 9 9.5 10 10.5 11 11.5 12 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 290ma
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 5 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (pulse d opeartion) 36 38 40 42 44 46 48 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 25 30 35 40 45 50 55 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 36 38 40 42 44 46 48 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. i d 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v pulsed: pw=100us, dc=10% 25 30 35 40 45 50 55 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. i d 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v pulsed: pw=100us, dc=10% 25 30 35 40 45 50 55 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. temperature +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 35 37 39 41 43 45 47 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10%
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 6 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (pulse d operation) 33 35 37 39 41 43 45 47 0 2 4 6 8 10 12 14 16 18 20 22 p out (dbm) input power (dbm) output power vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 22 pae (%) input power (dbm) pae vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 14 16 18 20 22 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 20 23 26 29 32 35 38 0 2 4 6 8 10 12 14 16 18 20 22 gain (db) input power (dbm) power gain vs. input power vs. freq. 10.0ghz 10.5ghz 11ghz temp. = +25 c v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 35 37 39 41 43 45 47 10 10.2 10.4 10.6 10.8 11 p out (dbm) frequency (ghz) output power vs. frequency psat @ pin=18dbm p1db temp. = +25 c pulsed: pw=100us, dc=10% v d = 28v, i dq = 290ma 500 1000 1500 2000 2500 3000 3500 9 9.5 10 10.5 11 11.5 12 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10%
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 7 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (cw operation) 35 37 39 41 43 45 47 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 18dbm temp. = +25 c i dq = 290ma cw 20 25 30 35 40 45 50 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 18dbm temp. = +25 c i dq = 290ma cw 35 37 39 41 43 45 47 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. i d 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v cw 20 25 30 35 40 45 50 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. i d 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v cw 35 37 39 41 43 45 47 9 9.5 10 10.5 11 11.5 12 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw 20 25 30 35 40 45 50 9 9.5 10 10.5 11 11.5 12 pae (%) frequency (ghz) pae vs. frequency vs. temperature +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 8 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (cw operation) 33 35 37 39 41 43 45 47 0 2 4 6 8 10 12 14 16 18 20 22 p out (dbm) input power (dbm) output power vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma cw 20 23 26 29 32 35 38 0 2 4 6 8 10 12 14 16 18 20 22 gain (db) input power (dbm) power gain vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma cw 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 14 16 18 20 22 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma cw 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 22 pae (%) input power (dbm) pae vs. input power vs. freq. 10.0ghz 10.5ghz 11.0ghz temp. = +25 c v d = 28v, i dq = 290ma cw 35 37 39 41 43 45 47 10 10.2 10.4 10.6 10.8 11 p out (dbm) frequency (ghz) output power vs. frequency psat @ pin=18dbm p1db temp. = +25 c cw v d = 28v, i dq = 290ma 500 1000 1500 2000 2500 3000 3500 9 9.5 10 10.5 11 11.5 12 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 9 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (linearity) -70 -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 45 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 28v, i dq = 290ma, 1mhz tone spacing temp. = +25 c 11.0ghz 10.5ghz 10.0ghz -80 -70 -60 -50 -40 -30 -20 -10 20 25 30 35 40 45 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 28v, i dq = 290ma, 1mhz tone spacing temp. = +25 c 11.0ghz 10.5ghz 10.0ghz -70 -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 45 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. v d /i dq freq. = 10.5ghz, 1mhz tone spacing temp. = +25 c v=28v, i dq =290ma v=25v, i dq =290ma v=28v, i dq =725ma v=25v, i dq =725ma -80 -70 -60 -50 -40 -30 -20 -10 20 25 30 35 40 45 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. v d /i dq freq. = 10.5ghz, 1mhz tone spacing temp. = +25 c v=28v, i dq =290ma v=25v, i dq =290ma v=28v, i dq =725ma v=25v, i dq =725ma -80 -70 -60 -50 -40 -30 -20 0 2 4 6 8 10 12 14 16 18 20 22 2f 0 output power (dbc) input power (dbm) 2 nd harmonic vs. input power vs. freq. v d = 28v, i dq = 290ma temp. = +25 c 11.0ghz 10.5ghz 10.0ghz -100 -90 -80 -70 -60 -50 -40 -30 -20 0 2 4 6 8 10 12 14 16 18 20 22 3f 0 output power (dbc) input power (dbm) 3 rd harmonic vs. input power vs. freq. v d = 28v, i dq = 290ma temp. = +25 c 11.0ghz 10.5ghz 10.0ghz
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 10 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. remove caps for pulse operation. these caps are part of the cable harness for cw operation. application circuit bias - up procedure 1. set i d limit to 3.5 a, i g limit to 10 ma 2. set v g to - 5.0v 3 . set v d +28 v 4 . adjust v g more positive until i dq = 29 0ma (v g ~ - 2.7 v typical) 5 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5.0v. ensure i dq ~ 0ma 3 . set v d to 0v 4 . turn off v d supply 5 . turn off v g supply j1 rf in j2 rf out 10 9 7 1 2 4 3 6 5 8 r2 10 ohms c11 0.1 uf c12 47 uf c8 1000uf r1 c9 0.1 uf 1000pf c7 1000pf c5 c10 47 uf 1000pf 1000pf c4 c2 c3 1000uf c1 1000uf c13 (1) 100 uf 10 ohms c6 1000uf c14 (1) 100 uf vg = -2.7 v typical vd = 28 v, idq = 290 ma
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 11 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board (evb) layout assembly bill of materials reference design value description manufacturer part number c1 C c8 1000pf slc, 50v various c 9, c11 0. 1 uf cap, 0402 , 50v, 10%, x 7 r various c 10, c12 47 uf cap, 1206 , 50v, 10%, x 7 r various r1 C r2 10? res, 0402 various r3 C r 4 0? res, 0402 various notes: 1. 100uf/100v charge storage cap is needed on the drain . for pulsed operation this cap must be on the supply - side of the pulse - modulator.
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 12 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing & bond pad description u n it: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size description 1 rf in 0.1 50 x 0. 300 rf input ; matched to 50? 2, 8 v g 1 - 2 0.080 x 0.080 gate voltage 1 , bias network is required; see application circuit on page 10 as an example. 4,10 v g 3 0. 080 x 0. 080 gate voltage 3 , b ias network is required; s ee application circuit on page 10 as an example. 3 , 9 v d 1 - 2 0.1 50 x 0. 1 00 drain voltage 1 , bias network is required; see application ci rcuit on page 10 as an example. 5, 7 v d 3 0.300 x 0.150 drain voltage 3 , b ias network is required; s ee application circuit on page 10 as an example. 6 rf out 0.140 x 0.400 rf output; matched to 50? 1 2 3 4 5 6 7 8 9 10
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 13 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn ( 8 0/ 2 0) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expan sion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical param eters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga2623 10 C 11ghz 35w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 14 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or author ized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : 3a001.b.2.b

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